Hynix delivers world’s first low-power high-speed mobile 1Gb DDR2 DRAM
Bharat | Apr 28 2009


In order to cater to the growing trend in chip production, Hynix has entered the arena with a thump, developing the world’s first mobile 1Gb DDR2 DRAM using 54nm manufacturing process. Applying 54 nanometer technology into the chip, the company has managed to deliver DRAM with both low power consumption and high speed capability. Complying with JEDEC standards and suited well for next generation mobile applications, the new chip could enter mass production in the second half of this year.

Performance and speed

The present day mobile DDR2 chips offer 800Mb speeds, while in comparison the newly developed DDR2 DRAM offers a maximum speed of 1066MHz, and 32-bit Input/Output performance. The Hynix’s mobile DDR2 chip is patched eco-friendly, courtesy its 50% efficiency against the current DDRs and 30% more efficiency compared to the DDR2 DRAM or desktop memory.

Via: Hynix

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